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| DISCRETE SEMICONDUCTORS DATA SHEET BFQ246 PNP video transistor Product specification Supersedes data of 1995 Oct 09 File under Discrete Semiconductors, SC05 1996 Sep 04 Philips Semiconductors Product specification PNP video transistor APPLICATIONS * Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package. PINNING PIN 1 2 3 4 base emitter collector Fig.1 Simplified outline SOT223. DESCRIPTION emitter BFQ246 handbook, halfpage 4 1 Top view 2 3 MSB002 - 1 QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature up to Ts = 60 C IC = -25 mA; VCE = -10 V IC = 0; VCB = -10 V CONDITIONS open emitter - - - 1 1.7 - TYP. MAX. -100 -100 3 - - 175 V mA W GHz pF C UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter RBE = 100 open collector see Fig.2 see Fig.2 up to Ts = 60 C; note 1; see Fig.3 - - - - - - -65 - MIN. MAX. -100 -95 -3 -100 -100 3 +175 175 V V V mA mA W C C UNIT 1996 Sep 04 2 Philips Semiconductors Product specification PNP video transistor BFQ246 -103 handbook, halfpage MBG511 handbook, halfpage 4 MBG512 Ptot (W) IC (mA) 3 -102 2 1 -10 -10 0 -102 VCE (V) -103 0 100 Ts (oC) 200 Ts = 60 C. VCE -50 V. Fig.2 DC SOAR. Fig.3 Power derating curve. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature of the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CER V(BR)EBO ICES hFE fT Cre PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain transition frequency feedback capacitance CONDITIONS IC = -0.1 mA; IE = 0 IC = 0; IE = -0.1 mA VCE = -50 V; VBE = 0 IC = -25 mA; VCE = -10 V; see Fig.4 IC = -25 mA; VCE = -10 V; f = 500 MHz; see Fig.5 IC = 0; VCB = -10 V; f = 1 MHz; see Fig.6 3 MIN. -100 -95 -3 - 20 - - - - - - - 1 1.7 TYP. MAX. - - - -100 - - - GHz pF UNIT V V V A PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 3 W; up to Ts = 60 C; note 1 VALUE 38.5 UNIT K/W collector-emitter breakdown voltage IC = -1 mA; RBE = 100 1996 Sep 04 Philips Semiconductors Product specification PNP video transistor BFQ246 handbook, halfpage 80 MBG513 handbook, halfpage 1.2 MBG514 hFE 60 fT (MHz) 0.8 40 0.4 20 0 0 -20 -40 -60 -80 -100 IC (mA) 0 -10 -20 -50 2 IC (mA) -10 VCE = -10 V; tp = 500 s. VCE = -10 V; f = 500 MHz. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Transition frequency as a function of collector current; typical values. handbook, halfpage C 6 re (pF) 5 MBG515 4 3 2 1 0 0 -2 -4 -6 -8 -10 VCB (V) f = 1 MHz. Fig.6 Feedback capacitance as a function of collector-base voltage; typical values. 4 1996 Sep 04 Philips Semiconductors Product specification PNP video transistor PACKAGE OUTLINE BFQ246 handbook, full pagewidth 0.95 0.85 S 0.32 0.24 seating plane 6.7 6.3 3.1 2.9 0.1 S B 4 0.2 M A A 0.10 0.01 3.7 3.3 o 7.3 6.7 16 o max 16 1 1.80 max 10 o max 2.3 4.6 2 0.80 0.60 3 0.1 M B (4x) MSA035 - 1 Dimensions in mm. Fig.7 SOT223. 1996 Sep 04 5 Philips Semiconductors Product specification PNP video transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFQ246 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 04 6 |
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